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Harsh Environment Silicon Carbide Sensor Technology Geothermal Project
Coordinates 37.8717°, -122.2728°Latitude: 37.8717
Longitude: -122.2728
  +
Geothermal/AwardeeCostShare 456,071  +
Geothermal/AwardeeWebsite http://www.me.berkeley.edu/  +
Geothermal/Awardees Department of Mechanical Engineering, University of California, Berkeley  +
Geothermal/DOEFundingLevel 1,824,281  +
Geothermal/FundingOpportunityAnnouncemt DE-FOA-0000075  +
Geothermal/FundingSource American Recovery and Reinvestment Act of 2009  +
Geothermal/Impacts If successful, the project would allow permanent well sensing at high temperatures.  +
Geothermal/LegalNameOfAwardee The Regents of the University of California  +
Geothermal/LocationOfProject Berkeley, California: Energy Resources +
Geothermal/Objectives In the proposed work, two types of physical sensors (pressure and temperature) and a sensor bonding process that can withstand the harsh reservoir environment will be developed.  +
Geothermal/Partner1 -  +
Geothermal/PrincipalInvestigator Albert P. Pisano, Professor and Department Chair, Department of Mechanical Engineering, University of California, Berkeley  +
Geothermal/ProjectDesc The development of harsh environment silic
The development of harsh environment silicon carbide (SiC) sensor technology can aid in data logging and monitoring of geothermal reservoirs which are challenging to assess. State-of-the-art sensors based on silicon technology are limited to temperatures below 300oC and are not suitable for supercritical conditions. As a result, new material platforms that utilize chemically inert, ceramic semiconductor materials are proposed for harsh environment applications. Technology developed at UC Berkeley has demonstrated the chemical and mechanical robustness of SiC sensors at temperatures as high as 600oC and in dry steam.
ratures as high as 600oC and in dry steam.  +
Geothermal/ProjectTypeTopic1 Recovery Act: Enhanced Geothermal Systems Component Research and Development/Analysis  +
Geothermal/ProjectTypeTopic2 High-Temperature Downhole Tools  +
Geothermal/TargetsMilestones -Develop a SiC pressure sensor that can op
-Develop a SiC pressure sensor that can operate in harsh supercritical conditions -Develop a SiC temperature sensor that can operate in harsh supercritical conditions while maintaining high sensitivities -Develop a bonding process for adhering SiC sensor die to well casing couplers -Perform experimental exposure testing (at 220 bar and 374oC) of sensor materials and actual sensor devices in a small-scale pressure vessel
r devices in a small-scale pressure vessel  +
Geothermal/TotalProjectCost 2,280,352  +
Name Harsh Environment Silicon Carbide Sensor Technology  +
Place California: Energy Resources +
Has query
"Has query" is a predefined property that represents meta information (in form of a subobject) about individual queries and is provided by Semantic MediaWiki.
Harsh Environment Silicon Carbide Sensor Technology Geothermal Project +
Categories Geothermal ARRA Funded Projects , Geothermal ARRA Projects
Modification date
"Modification date" is a predefined property that corresponds to the date of the last modification of a subject and is provided by Semantic MediaWiki.
18:27:13, 22 July 2011  +
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